82 research outputs found

    Topology of Cell-Aggregated Planar Graphs

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    We present new algorithm for growth of non-clustered planar graphs by aggregation of cells with given distribution of size and constraint of connectivity k=3 per node. The emergent graph structures are controlled by two parameters--chemical potential of the cell aggregation and the width of the cell size distribution. We compute several statistical properties of these graphs--fractal dimension of the perimeter, distribution of shortest paths between pairs of nodes and topological betweenness of nodes and links. We show how these topological properties depend on the control parameters of the aggregation process and discuss their relevance for the conduction of current in self-assembled nanopatterns.Comment: 8 pages, 5 figure

    Realistic Electron-Electron Interaction in a Quantum Wire

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    The form of an effective electron-electron interaction in a quantum wire with a large static dielectric constant is determined and the resulting properties of the electron liquid in such a one-dimensional system are described. The exchange and correlation energies are evaluated and a possibility of a paramagnetic-ferromagnetic phase transition in the ground state of such a system is discussed. Low-energy excitations are briefly described.Comment: 10 pages, 6 figure

    Analytical study of non-linear transport across a semiconductor-metal junction

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    In this paper we study analytically a one-dimensional model for a semiconductor-metal junction. We study the formation of Tamm states and how they evolve when the semi-infinite semiconductor and metal are coupled together. The non-linear current, as a function of the bias voltage, is studied using the non-equilibrium Green's function method and the density matrix of the interface is given. The electronic occupation of the sites defining the interface has strong non-linearities as function of the bias voltage due to strong resonances present in the Green's functions of the junction sites. The surface Green's function is computed analytically by solving a quadratic matrix equation, which does not require adding a small imaginary constant to the energy. The wave function for the surface states is given

    Electron transport in nanotube--molecular wire hybrids

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    We study contact effects on electron transport across a molecular wire sandwiched between two semi-infinite (carbon) nanotube leads as a model for nanoelectrodes. Employing the Landauer scattering matrix approach we find that the conductance is very sensitive to parameters such as the coupling strength and geometry of the contact. The conductance exhibits markedly different behavior in the two limiting scenarios of single contact and multiple contacts between the molecular wire and the nanotube interfacial atoms. In contrast to a single contact the multiple-contact configuration acts as a filter selecting single transport channels. It exhibits a scaling law for the conductance as a function of coupling strength and tube diameter. We also observe an unusual narrow-to-broad-to-narrow behavior of conductance resonances upon decreasing the coupling.Comment: 4 pages, figures include

    An effective mass theorem for the bidimensional electron gas in a strong magnetic field

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    We study the limiting behavior of a singularly perturbed Schr\"odinger-Poisson system describing a 3-dimensional electron gas strongly confined in the vicinity of a plane (x,y)(x,y) and subject to a strong uniform magnetic field in the plane of the gas. The coupled effects of the confinement and of the magnetic field induce fast oscillations in time that need to be averaged out. We obtain at the limit a system of 2-dimensional Schr\"odinger equations in the plane (x,y)(x,y), coupled through an effective selfconsistent electrical potential. In the direction perpendicular to the magnetic field, the electron mass is modified by the field, as the result of an averaging of the cyclotron motion. The main tools of the analysis are the adaptation of the second order long-time averaging theory of ODEs to our PDEs context, and the use of a Sobolev scale adapted to the confinement operator

    Scaling analysis of electron transport through metal-semiconducting carbon nanotube interfaces: Evolution from the molecular limit to the bulk limit

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    We present a scaling analysis of electronic and transport properties of metal-semiconducting carbon nanotube interfaces as a function of the nanotube length within the coherent transport regime, which takes fully into account atomic-scale electronic structure and three-dimensional electrostatics of the metal-nanotube interface using a real-space Green's function based self-consistent tight-binding theory. As the first example, we examine devices formed by attaching finite-size single-wall carbon nanotubes (SWNT) to both high- and low- work function metallic electrodes through the dangling bonds at the end. We analyze the nature of Schottky barrier formation at the metal-nanotube interface by examining the electrostatics, the band lineup and the conductance of the metal-SWNT molecule-metal junction as a function of the SWNT molecule length and metal-SWNT coupling strength. We show that the confined cylindrical geometry and the atomistic nature of electronic processes across the metal-SWNT interface leads to a different physical picture of band alignment from that of the planar metal-semiconductor interface. We analyze the temperature and length dependence of the conductance of the SWNT junctions, which shows a transition from tunneling- to thermal activation-dominated transport with increasing nanotube length. The temperature dependence of the conductance is much weaker than that of the planar metal-semiconductor interface due to the finite number of conduction channels within the SWNT junctions. We find that the current-voltage characteristics of the metal-SWNT molecule-metal junctions are sensitive to models of the potential response to the applied source/drain bias voltages.Comment: Minor revision to appear in Phys. Rev. B. Color figures available in the online PRB version or upon request to: [email protected]

    Formation of two-dimensional weak localization in conducting Langmuir-Blodgett films

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    We report the magnetotransport properties up to 7 T in the organic highly conducting Langmuir-Blodgett(LB) films formed by a molecular association of the electroactive donor molecule bis(ethylendioxy)tetrathiafulvalene (BEDO-TTF) and stearic acid CH3_3(CH2_2)16_{16}COOH. We show the logarithmic decrease of dc conductivity and the negative transverse magnetoresistance at low temperature. They are interpreted in the weak localization of two-dimensional (2D) electronic system based on the homogeneous conducting layer with the molecular size thickness of BEDO-TTF. The electronic length with phase memory is given at the mesoscopic scale, which provides for the first time evidence of the 2D coherent charge transport in the conducting LB films.Comment: 5 pages, 1 Table and 5 figure

    Numerical study of the thermoelectric power factor in ultra-thin Si nanowires

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    Low dimensional structures have demonstrated improved thermoelectric (TE) performance because of a drastic reduction in their thermal conductivity, {\kappa}l. This has been observed for a variety of materials, even for traditionally poor thermoelectrics such as silicon. Other than the reduction in {\kappa}l, further improvements in the TE figure of merit ZT could potentially originate from the thermoelectric power factor. In this work, we couple the ballistic (Landauer) and diffusive linearized Boltzmann electron transport theory to the atomistic sp3d5s*-spin-orbit-coupled tight-binding (TB) electronic structure model. We calculate the room temperature electrical conductivity, Seebeck coefficient, and power factor of narrow 1D Si nanowires (NWs). We describe the numerical formulation of coupling TB to those transport formalisms, the approximations involved, and explain the differences in the conclusions obtained from each model. We investigate the effects of cross section size, transport orientation and confinement orientation, and the influence of the different scattering mechanisms. We show that such methodology can provide robust results for structures including thousands of atoms in the simulation domain and extending to length scales beyond 10nm, and point towards insightful design directions using the length scale and geometry as a design degree of freedom. We find that the effect of low dimensionality on the thermoelectric power factor of Si NWs can be observed at diameters below ~7nm, and that quantum confinement and different transport orientations offer the possibility for power factor optimization.Comment: 42 pages, 14 figures; Journal of Computational Electronics, 201

    Dissipative Chaos in Semiconductor Superlattices

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    We consider the motion of ballistic electrons in a miniband of a semiconductor superlattice (SSL) under the influence of an external, time-periodic electric field. We use the semi-classical balance-equation approach which incorporates elastic and inelastic scattering (as dissipation) and the self-consistent field generated by the electron motion. The coupling of electrons in the miniband to the self-consistent field produces a cooperative nonlinear oscillatory mode which, when interacting with the oscillatory external field and the intrinsic Bloch-type oscillatory mode, can lead to complicated dynamics, including dissipative chaos. For a range of values of the dissipation parameters we determine the regions in the amplitude-frequency plane of the external field in which chaos can occur. Our results suggest that for terahertz external fields of the amplitudes achieved by present-day free electron lasers, chaos may be observable in SSLs. We clarify the nature of this novel nonlinear dynamics in the superlattice-external field system by exploring analogies to the Dicke model of an ensemble of two-level atoms coupled with a resonant cavity field and to Josephson junctions.Comment: 33 pages, 8 figure

    Green function techniques in the treatment of quantum transport at the molecular scale

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    The theoretical investigation of charge (and spin) transport at nanometer length scales requires the use of advanced and powerful techniques able to deal with the dynamical properties of the relevant physical systems, to explicitly include out-of-equilibrium situations typical for electrical/heat transport as well as to take into account interaction effects in a systematic way. Equilibrium Green function techniques and their extension to non-equilibrium situations via the Keldysh formalism build one of the pillars of current state-of-the-art approaches to quantum transport which have been implemented in both model Hamiltonian formulations and first-principle methodologies. We offer a tutorial overview of the applications of Green functions to deal with some fundamental aspects of charge transport at the nanoscale, mainly focusing on applications to model Hamiltonian formulations.Comment: Tutorial review, LaTeX, 129 pages, 41 figures, 300 references, submitted to Springer series "Lecture Notes in Physics
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